chercheur en milieu académique*chercheur en entreprise, R&D du secteur privé*métiers d’accompagnement et de support à la recherche, à l’innovation et à la valorisation, au développement des Spin Off et Start-up innovantes*entrepreneur des domaines innovants*

Coordonnées

Techniques maîtrisées

Programming Languages – C, Matlab Script, Assembly, VHDL. Scientific Applications – Matlab, ADS (advanced design system), Cadence, OrCAD, Proteus, AutoCAD, MPLAB, RETScreen, ModelSim, NI LabVIEW, NI Multisim, HFSS. Other Applications – MS Office (Word, Power Point, Excel), Adobe Photoshop, Adobe Premiere, Sony Vegas Pro. Operating Systems –Linux, MS Windows.

Compétences

• Vast knowledge of engineering concepts. • Outstanding analytical and critical thinking skills. • Excellent interpersonal skills. • Very good time management abilities. • Multi-tasking • Teamwork. • Ability to quickly adapt to new environments. • Good communication skills.

Doctorat

Intitulé : « Sciences pour l'ingénieur » : spécialité « Micro et Nanoélectronique »
1ère inscription en thèse : Janvier 2018
École doctorale : SCIENCES POUR L'INGENIEUR : Mécanique, Physique, Micro et Nanoélectronique
Date de soutenance de la thèse : 4 Décembre 2020
Sujet : Co-Integration de mémoires résistives dans des technologies CMOS
Directeur de thèse : Hassen AZIZA
Co-directeur : Adnan HARB
Unité de recherche : IM2NP - INSTITUT MATERIAUX MICROELECTRONIQUE NANOSCIENCES DE PROVENCE
Intitulé de l'équipe :

Master

Intitulé : M.Sc. Electronics Engineering
Décembre 2016 - Lebanese International University

Langues vivantes

Anglais : C1 - Avancé
Français : B1 - Intermédiaire
Arabe : Maternel

Production scientifique

  • Novel RRAM CMOS Non-Volatile Memory Cells in 130nm Technology
    ICCA 2018 2018
    H. Bazzi, A.Harb, H. Aziza, M. Moreau
  • A low-noise voltage-controlled ring oscillator in 28-nm FDSOI technology
    ICM 2017 2017
    H. Bazzi, M. Abou Chanine, A. Mohsen, A. Harb
    https://ieeexplore.ieee.org/document/8268826/
  • A Low Phase Noise Multi-Gigahertz Ring based Voltage-Controlled-Oscillator in 0.13 um CMOS Technology
    International Journal of Digital Information and Wireless Communications (IJDIWC) 2018
    H. Bazzi, M.Abou Chanine, A. Mohsen, A. Harb
    http://sdiwc.net/digital-library/a-low-phase-noise-multigigahertz-ring-based-voltagecontrolledoscillator-in-013-um-cmos-technology.html
  • Design of Hybrid CMOS Non-Volatile SRAM Cells in 130nm RRAM Technology
    2018 30th International Conference on Microelectronics (ICM) 2019
    H. Bazzi, A. Harb, H. Aziza and M. Moreau
  • An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits
    14th IEEE International Conference on Design & Technology of Integrated Systems (DTIS) in Nanoscale Era 2019
    H. Aziza, H. Bazzi, J. Postel-Pellerin, P. Canet, M. Moreau, A. Harb
  • A low-noise voltage-controlled ring oscillator in 28-nm FDSOI technology for UWB applications
    AEU-International Journal of Electronics and Communications 2018
    Mouhammad Abou Chahine, Hussein Bazzi, Ali Mohsen, Adnan Harb, Abdallah Kassem
  • True random number generation exploiting SET voltage variability in resistive RAM memory arrays
    2019 19th Non-Volatile Memory Technology Symposium (NVMTS) 2019
    Jeremy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Mathieu Moreau, Adnan Harb
  • True Random Number Generator Integration in a Resistive RAM Memory Array using Input Current Limitation
    IEEE Transactions on Nanotechnology 2020
    Hassen Aziza, Jeremy Postel-Pellerin, Hussein Bazzi, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb
  • RRAM-based non-volatile SRAM cell architectures for ultra-low-power applications
    Analog Integrated Circuits and Signal Processing 2020
    Hussein Bazzi, Adnan Harb, Hassen Aziza, Mathieu Moreau, Abdallah Kassem
  • Design of a Novel Hybrid CMOS Non-Volatile SRAM Memory in 130nm RRAM Technology
    2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS) 2020
    Hussein Bazzi, Hassen Aziza, Mathieu Moreau, Adnan Harb
  • Non-Volatile SRAM Memory Cells Based on ReRAM Technology
    SN Applied Sciences 2020
    Hussein Bazzi, Adnan Harb, Hassen Aziza, Mathieu Moreau
  • Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation
    2020 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology (DFT) 2020
    Hussein Bazzi, Jeremy Postel-Pellerin, Hassen Aziza, Mathieu Moreau, Adnan Harb