Monsieur Terry FRANCOIS / PhD

chercheur en entreprise, R&D du secteur privé*pilotage de la recherche et de l'innovation, gestion de projets innovants, pilotage de structures innovantes*

Contact details

Jobs

Research : NON

PhD

Title : Sciences pour l'ingénieur : spécialité Micro et Nanoélectronique

First registration date : 3 October 2018 / 4A

Doctoral school : Sciences pour l'Ingénieur : Mécanique, Physique, Micro et Nanoélectronique

Thesis defense date : 24 November 2022

Subject : Caractérisation électrique et analyse de mémoires non-volatiles embarquées à base de matériaux ferroélectriques

Thesis supervisor : BOCQUET Marc

Thesis co-supervisor : CHIQUET Philippe

Research unit : IM2NP - Institut Matériaux Microélectronique Nanosciences de Provence

Master's degree

Title : Master de Sciences, Technologies, Santé mention Physique Chimie

June 2018 - Université de Reims-Champagne-Ardenne

Mention : Très Bien

Publications

  • High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays
    IEEE Transactions on Electron Devices, 2022
    Francois, T. and Coignus, J. and Makosiej, A. and Giraud, B. and Carabasse, C. and Barbot, J. and Martin, S. and Castellani, N. and Magis, T. and Grampeix, H. and Van Duijn, S. and Mounet, C. and Chiquet, P. and Schroeder, U. and Slesazeck, S. and Mikolajick, T. and Nowak, E. and Bocquet, M. and Barrett, N. and Andrieu, F. and Grenouillet, L
    https://ieeexplore.ieee.org/document/9675825
  • 16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility
    2021 IEEE International Electron Devices Meeting (IEDM), 2021
    T. Francois, J. Coignus, A. Makosiej, B. Giraud, C. Carabasse, J. Barbot, S. Martin, N. Castellani, T. Magis, H. Grampeix, S. Van Duijn, C. Mounet, P. Chiquet, U. Schroeder, S. Slesazeck, T. Mikolajick, E. Nowak, M. Bocquet, N. Barrett, F. Andrieu, L. Grenouillet
    TBD
  • Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors
    Applied Physics Letters, 2021
    T. Francois, L. Grenouillet, J. Coignus, N. Vaxelaire, C. Carabasse, F. Aussenac, S. Chevalliez, S. Slesazeck, C. Richter, P. Chiquet, M. Bocquet, U. Schroeder, T. Mikolajick, F. Gaillard, E. Nowak
    https://doi.org/10.1063/5.0035650
  • Nanosecond Laser Anneal (NLA) for Si-Implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL)
    2020 IEEE Symposium on VLSI Technology, 2020
    L. Grenouillet, T. Francois, J. Coignus, S. Kerdilès, N. Vaxelaire, C. Carabasse, F. Mehmood, S. Chevalliez, C. Pellissier, F. Triozon, F. Mazen, G. Rodriguez, T. Magis, V. Havel, S. Slesazeck, F. Gaillard, U. Schroeder, E. Nowak
    doi: 10.1109/VLSITechnology18217.2020.9265061
  • Patent number US 20200194442: "Method for fabricating a ferroelectric memory and method for co-fabrication of a ferroelectric memory and of a resistive memory."
    //, 2020
    L. Grenouillet, C. Charpin-Nicolle, J. Coignus, T. Francois, S. Kerdiles
    https://uspto.report/patent/grant/11,145,663
  • TiN/Gd:HfO2/TiN capacitors grown by PEALD showing high endurance ferroelectric switching
    Applied Physics Letters, 2020
    S. Belahcen, T. Francois, L. Grenouillet, A. Bsiesy, J. Coignus, M. Bonvalot
    https://aip.scitation.org/doi/10.1063/5.0035706
  • Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications
    2019 IEEE International Electron Devices Meeting (IEDM), 2019
    T. Francois, L. Grenouillet, J. Coignus, P. Blaise, C. Carabasse, N. Vaxelaire, T. Magis, F. Aussenac, V. Loup, C. Pellissier, S. Slesazeck, V. Havel, C. Richter, A. Makosiej, B. Giraud, E. T. Breyer, M. Materano, P. Chiquet, M. Bocquet, E. Nowak, U. Schroeder, F. Gaillard
    doi: 10.1109/IEDM19573.2019.8993485
  • Electrical characterization and analysis of Energy Efficient Embedded Non-volatile Memory based on Ferroelectric materials
    ISOE 2019, 2019
    T. Francois, J. Coignus, P. Chiquet, M. Bocquet

  • Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance
    IMW 2019, 2019
    T. Francois, J. Coignus, L. Grenouillet, J.P. Barnes, N. Vaxelaire, J. Ferrand, I. Bottala-Gambetta, M. Gros-Jean, S. Jeannot, P. Boivin, P. Chiquet, M. Bocquet, E. Nowak, F. Gaillard
    https://ieeexplore.ieee.org/document/8739664
  • X-ray Diffraction Study of Electrically Aged HfO2 based Ferroelectric Capacitors
    Rayons X et Matière 2019, 2019
    N. Vaxelaire, T. Francois, C. Mocuta, I. Bottala Gambetta, J. Coignus, L. Grenouillet
    //
  • Evaluation of Ferroelectricity in Si-implanted HfO2 along Cycling
    SSDM 2018, 2018
    T. Francois, J. Coignus, L. Grenouillet, M. Barlas, B. Bessif, N. Vaxelaire, H. Boutry, M. Coig, E. Vilain, N. Rambal, J.-M. Pedini, Y. Morand, F. Mazen, E. Nowak, F. Gaillard
    https://confit.atlas.jp/guide/event/ssdm2018/subject/C-6-02/detail?lang=en

Languages

Anglais : C1 - Avancé

Français : C2 - Maternel

Allemand : A2 - Élémentaire